P.157L: Late News Poster: Characterization of Asymmetrical Negative Bias Stress Effect on the Density‐of‐States and Parasitic Resistances in a‐IGZO Thin‐Film Transistors. Issue 1 (1st July 2013) - Jo, Chunhyung
Abstract The dominant mechanism of the negative bias stress (NBS)‐induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and TCAD simulation.