Cite

MLA Citation

    J. Li et al.. “Strain Quantification Analysis of Epitaxial SiGe on SOI by Nanobeam Diffraction (NBD).” Microscopy and microanalysis, vol. 20, n.d., pp. 1070–1071. http://access.bl.uk/ark:/81055/vdc_100024908116.0x000014
  
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