Analysis of carrier injection in Si nanoparticle‐SiOx film based MOS devices. Issue 2 (23rd January 2014)

• Record Type: Journal Article
• Authors: Jacques, E.; Pichon, L.; Labbe, C.; Khomenkova, L.; Gourbilleau, F.
• Is Part Of: Physica status solidi. Volume 11:Issue 2(2014:Feb.)
• Page Start: 206
• Page End: 210
• Publication Date: 2014-01-23
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300379
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The electrical properties of silicon rich oxide (SRO) layers integrated in metal‐oxide‐semiconductor device are analysed. The layers are deposited using the magnetron co‐sputtering of a pure SiO₂ and Si targets under a pure argon plasma. Each SRO layer embedding silicon nanoparticles (Si‐np‐SiO_x) was subsequently submitted to an optimized annealing treatment. Three types of Al/Si‐np‐SiO_x/p‐Si devices are fabricated with different incorporated silicon excesses (9, 11, or 16 at.%) in the active layer. Analysis of static electrical properties of the devices showed a semi‐resistive behaviour for each device. Carrier injection into the SiO_x matrix in terms of Poole‐Frenkel and Fowler‐Nordheim mechanisms is analysed in relation with the incorporated silicon excess. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>