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HARVARD Citation
Ogawa, H. et al. (n.d.). Normally‐off GaN MOSFETs with high‐k dielectric CeO2 films deposited by RF sputtering. Physica status solidi. 11 (2), pp. 302-306. [Online].
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Ogawa, H. et al. (n.d.). Normally‐off GaN MOSFETs with high‐k dielectric CeO2 films deposited by RF sputtering. Physica status solidi. 11 (2), pp. 302-306. [Online].