Normally‐off GaN MOSFETs with high‐k dielectric CeO2 films deposited by RF sputtering. Issue 2 (20th January 2014)

• Record Type: Journal Article
• Authors: Ogawa, Hiroki; Okazaki, Takuya; Kasai, Hayao; Hara, Kenta; Notani, Yuki; Yamamoto, Yasuhiro; Nakamura, Tohru
• Is Part Of: Physica status solidi. Volume 11:Issue 2(2014:Feb.)
• Page Start: 302
• Page End: 306
• Publication Date: 2014-01-20
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300314
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>This paper describes normally‐off GaN MOSFETs with high‐k dielectric CeO₂ films made by ion implantation. Ion implantation process reduces sheet and contact resistances of source and drain regions of this device. To obtain high <italic>I</italic>_dss and <italic>g</italic>_mmax, high‐k dielectric CeO₂ was used as gate oxide films for GaN MOSFETs for the first time. Nitrogen ion implantation isolation processes were also adopted to fabricate isolation region. Normally‐off GaN MOSFETs with <italic>I</italic>_dss of 350 mA/mm, <italic>g</italic>_mmax of 40 mS/mm and threshold voltage of +0.5 V were obtained. The high Idss and normally‐off mode show the potential and advantages of GaN MOSFETs for high voltage operations. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>