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HARVARD Citation
Koehler, F. et al. (n.d.). Challenges in spacer process development for leading‐edge high‐k metal gate technology. Physica status solidi. 11 (1), pp. 73-76. [Online].
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Koehler, F. et al. (n.d.). Challenges in spacer process development for leading‐edge high‐k metal gate technology. Physica status solidi. 11 (1), pp. 73-76. [Online].