Cite

MLA Citation

    K. Kobayashi et al.. “AlGaN/GaN MIS‐gate HEMTs with SiCN gate stacks.” Physica status solidi, vol. 10, no. 5, n.d., pp. 790–793. http://access.bl.uk/ark:/81055/vdc_100024885621.0x000031
  
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