Cite
HARVARD Citation
Kobayashi, K. et al. (n.d.). AlGaN/GaN MIS‐gate HEMTs with SiCN gate stacks. Physica status solidi. 10 (5), pp. 790-793. [Online].
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Kobayashi, K. et al. (n.d.). AlGaN/GaN MIS‐gate HEMTs with SiCN gate stacks. Physica status solidi. 10 (5), pp. 790-793. [Online].