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HARVARD Citation
Qaisi, R. et al. (n.d.). Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature. Physica status solidi. 8 (7), pp. 621-624. [Online].
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Qaisi, R. et al. (n.d.). Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature. Physica status solidi. 8 (7), pp. 621-624. [Online].