Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature. Issue 7 (15th May 2014)

• Record Type: Journal Article
• Authors: Qaisi, Ramy M.; Smith, Casey E.; Hussain, Muhammad M.
• Is Part Of: Physica status solidi. Volume 8:Issue 7(2014:Jul.)
• Page Start: 621
• Page End: 624
• Publication Date: 2014-05-15
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409100
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra‐scaled (10 nm) high‐<italic>κ</italic> dielectric aluminum oxide (Al₂O₃) at elevated temperatures. We observed that the drive current increased by &gt;400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures &gt;200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>