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HARVARD Citation
Park, J. et al. (n.d.). Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process. Physica status solidi. 8 (3), pp. 239-242. [Online].
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Park, J. et al. (n.d.). Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process. Physica status solidi. 8 (3), pp. 239-242. [Online].