Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process. Issue 3 (23rd December 2013)

• Record Type: Journal Article
• Authors: Park, Ju Hyun; Kim, Hee‐Dong; Hong, Seok Man; Yun, Min Ju; Jeon, Dong Su; Kim, Tae Geun
• Is Part Of: Physica status solidi. Volume 8:Issue 3(2014:Mar.)
• Page Start: 239
• Page End: 242
• Publication Date: 2013-12-23
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201308309
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The improvement of resistive switching (RS) phenomena of silicon‐nitride (SiN_{<italic>x</italic>})‐based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un‐doped SiN_{<italic>x</italic>} films, the oxygen doped SiN_{<italic>x</italic>} (SiN_{<italic>x</italic>}:O₂)‐based ReRAM cells show a lower current (∼0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiN_{<italic>x</italic>}:O₂ film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiN_{<italic>x</italic>} films can effectively improve the RS characteristics of SiN_{<italic>x</italic>}‐based ReRAM cells. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>