Atomic hydrogen cleaning of In0.53Ga0.47As studied using synchrotron radiation photoelectron spectroscopy. Issue 11 (6th August 2013)

• Record Type: Journal Article
• Authors: Brennan, Barry; Kumarappan, Kumar; Hughes, Greg
• Is Part Of: Physica status solidi. Volume 7:Issue 11(2013:Nov.)
• Page Start: 989
• Page End: 992
• Publication Date: 2013-08-06
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201308038
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The removal of the native oxides from the In_0.53Ga_0.47As surface by exposure to atomic hydrogen has been investigated by highly surface sensitive synchrotron radiation based photoelectron spectroscopy. This shows that it is possible to fully remove the arsenic oxides at low temperatures, while still leaving a low concentration of stable Ga₂O and In₂O at the surface, and no evidence of indium loss from the substrate. The removal of surface carbon contamination is also seen, however full removal is only detected in the absence of prior substrate annealing. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>