Atomic hydrogen cleaning of In0.53Ga0.47As studied using synchrotron radiation photoelectron spectroscopy. Issue 11 (6th August 2013) - Brennan, Barry
Abstract The removal of the native oxides from the In0.53Ga0.47As surface by exposure to atomic hydrogen has been investigated by highly surface sensitive synchrotron radiation based photoelectron spectroscopy. This shows that it is possible to fully remove the arsenic oxides at low temperatures, while still leaving a low concentration of stable Ga2O and In2O at the surface, and no evidence of indium loss from the substrate. The removal of surface carbon contamination is also seen, however full removal is only detected in the absence of prior substrate annealing. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)