Cite
HARVARD Citation
Kim, H. et al. (n.d.). Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors. Physica status solidi. 7 (7), pp. 497-500. [Online].
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Kim, H. et al. (n.d.). Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors. Physica status solidi. 7 (7), pp. 497-500. [Online].