Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors. Issue 7 (13th June 2013)

• Record Type: Journal Article
• Authors: Kim, Hee‐Dong; Yun, Min Ju; Hong, Seok Man; An, Ho‐Myoung; Kim, Tae Geun
• Is Part Of: Physica status solidi. Volume 7:Issue 7(2013:Jul.)
• Page Start: 497
• Page End: 500
• Publication Date: 2013-06-13
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307192
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The influence of the hydrogen annealing treatment on the reliability of Ti/HfO<italic>_x</italic> /Pt capacitors is investigated by analyzing bias temperature instability (BTI). As compared to the N₂‐annealed sample, in the case of hydrogen‐annealed samples, both the set/reset voltages and currents are reduced from 6.5 V/–1.6 V to 3.8 V/–1.2 V and from 4 mA/170 nA to 800 µA/30 nA at 0.1 V, respectively. Of particular interest is the dramatic reduction in the set voltage variation from 3.3 V to 1.8 V. In addition, in BTI experiments, the current shift at the high resistance state (HRS) is reduced from 1.5 µA to 40 nA under a bias stress of –1 V/1000 s and from 40 µA to 0.5 µA under a temperature stress of 120 °C/1000 s. These results show that the hydrogen annealing treatment is very effective in improving the reliability of RRAM cells because it reduces the leakage current under bias temperature stress. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>