Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition. Issue 4 (28th November 2012)
- Record Type:
- Journal Article
- Title:
- Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition. Issue 4 (28th November 2012)
- Main Title:
- Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition
- Authors:
- Frascaroli, J.
Seguini, G.
Cianci, E.
Saynova, D.
van Roosmalen, J.
Perego, M. - Abstract:
- <abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Thin layers of Al<sub>2</sub>O<sub>3</sub> with thickness <italic>t</italic><sub>ox</sub> ≤ 8 nm were grown by thermal atomic layer deposition at low temperature of 100 °C and applied to achieve functional surface passivation of crystalline silicon substrates. Measurements of the effective lifetime were performed to characterize the surface passivation effect. Lifetime values in the range of 0.5 ms were obtained for Al<sub>2</sub>O<sub>3</sub> films with <italic>t</italic><sub>ox</sub> ≥ 6 nm upon post‐deposition annealing (PDA) at 250 °C in N<sub>2</sub> atmosphere. However, when the thickness of the Al<sub>2</sub>O<sub>3</sub> films was reduced to 4 nm, lifetime values well below 0.1 ms were observed even after PDA. Combined capacitance–voltage and conductance–voltage measurements were carried out to extract the amount of charges located near the silicon‐oxide interface and the density of electrically active interface states, respectively. The results of the electrical characterization were used to elucidate the intimate physical mechanisms that govern charge recombination at the Al<sub>2</sub>O<sub>3</sub>/Si interface.</p> <p>Density of interface states (a) and lifetime (b) values are reported as a function of the PDA temperature for Al<sub>2</sub>O<sub>3</sub> films of three different thickness values: 4, 6, and 8 nm. <boxed-text content-type="graphic" position="anchor"<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Thin layers of Al<sub>2</sub>O<sub>3</sub> with thickness <italic>t</italic><sub>ox</sub> ≤ 8 nm were grown by thermal atomic layer deposition at low temperature of 100 °C and applied to achieve functional surface passivation of crystalline silicon substrates. Measurements of the effective lifetime were performed to characterize the surface passivation effect. Lifetime values in the range of 0.5 ms were obtained for Al<sub>2</sub>O<sub>3</sub> films with <italic>t</italic><sub>ox</sub> ≥ 6 nm upon post‐deposition annealing (PDA) at 250 °C in N<sub>2</sub> atmosphere. However, when the thickness of the Al<sub>2</sub>O<sub>3</sub> films was reduced to 4 nm, lifetime values well below 0.1 ms were observed even after PDA. Combined capacitance–voltage and conductance–voltage measurements were carried out to extract the amount of charges located near the silicon‐oxide interface and the density of electrically active interface states, respectively. The results of the electrical characterization were used to elucidate the intimate physical mechanisms that govern charge recombination at the Al<sub>2</sub>O<sub>3</sub>/Si interface.</p> <p>Density of interface states (a) and lifetime (b) values are reported as a function of the PDA temperature for Al<sub>2</sub>O<sub>3</sub> films of three different thickness values: 4, 6, and 8 nm. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1x705hpp" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract> … (more)
- Is Part Of:
- Physica status solidi. Volume 210:Issue 4(2013:Apr.)
- Journal:
- Physica status solidi
- Issue:
- Volume 210:Issue 4(2013:Apr.)
- Issue Display:
- Volume 210, Issue 4 (2013)
- Year:
- 2013
- Volume:
- 210
- Issue:
- 4
- Issue Sort Value:
- 2013-0210-0004-0000
- Page Start:
- 732
- Page End:
- 736
- Publication Date:
- 2012-11-28
- Subjects:
- Solid state physics -- Periodicals
Solids -- Industrial applications -- Periodicals
530.41 - Journal URLs:
- http://onlinelibrary.wiley.com/ ↗
- DOI:
- 10.1002/pssa.201200568 ↗
- Languages:
- English
- ISSNs:
- 1862-6300
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6475.210000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 3646.xml