A Water‐free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films1. Issue 4 (16th May 2013)

• Record Type: Journal Article
• Authors: Guo, Jiao‐Jiao; Li, Ming‐Da; Sun, Qing‐Qing; Yang, Wen; Zhou, Peng; Ding, Shi‐Jin; Zhang, David Wei; Knez, Mato; Yong, Qin
• Is Part Of: Chemical vapor deposition. Volume 19:Issue 4/6(2013:Jun.)
• Page Start: 156
• Page End: 160
• Publication Date: 2013-05-16
• Subjects: Chemical vapor deposition -- Periodicals; 671.735
• DOI: 10.1002/cvde.201207032
• Languages: English
• ISSNs: 0948-1907

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A new low temperature atomic layer deposition (LT‐ALD) Al₂O₃ process using trimethylaluminum (TMA) and acetic acid (CH₃COOH) is studied both theoretically and experimentally. The atomistic mechanisms of the two deposition half‐cycles on Al‐CH₃*, Al‐OH*, and Al(η²‐O₂CCH₃)* are investigated using density functional theory (DFT). The experimental demonstrations are performed on Si substrates over the growth temperature range 75–400°C. Consistent with the DFT simulation, lower linear growth rate and shorter required oxidant purge times are observed at 90°C, when compared to LT‐ALD Al₂O₃ using H₂O as the oxidant. The chemical characteristics of the Al₂O₃ films grown with both CH₃COOH at 90°C and H₂O at 100°C are determined and compared using X‐ray photoelectron spectroscopy (XPS).</p> </abstract>