A Micro‐pulse Process of Atomic Layer Deposition of Iron Oxide Using Ferrocene and Ozone Precursors and Ti‐Doping. Issue 4 (16th May 2013)

• Record Type: Journal Article
• Authors: Li, Xianglin; Fan, Ng Chin; Fan, Hong Jin; Knez, Mato; Yong, Qin
• Is Part Of: Chemical vapor deposition. Volume 19:Issue 4/6(2013:Jun.)
• Page Start: 104
• Page End: 110
• Publication Date: 2013-05-16
• Subjects: Chemical vapor deposition -- Periodicals; 671.735
• DOI: 10.1002/cvde.201207030
• Languages: English
• ISSNs: 0948-1907

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Hematite (<italic>α</italic>‐Fe₂O₃) thin films are obtained by atomic layer deposition (ALD) in the temperature range 200 − 350°C using ferrocene and ozone as the precursors. A micro‐pulse process facilitates the precursor adsorption and shortens the ferrocene dose time to 5 s. When tested on Si(100) substrates, the growth rate is around 0.5 Å per cycle for the first 300 cycles, after which the growth becomes nonlinear. Interestingly, a linear growth can be maintained with a rate of ≈0.55 Å per cycle by TiO₂ co‐deposition (cycle ratio of TiO₂/Fe₂O₃ = 1:20). Characterizations by X‐ray photoemission spectroscopy (XPS), Raman spectroscopy (RS), and UV‐vis absorption confirm the presence of the <italic>α</italic>‐Fe₂O₃ phase after post‐deposition annealing. Uniform depositions on dense ZnO nanorod arrays and anodic aluminum oxide (AAO) templates are also demonstrated, inferring that the current process is capable of coating on high (&gt;50) aspect ratio structures.</p> </abstract>