Line Patterns from Cylinder‐Forming Photocleavable Block Copolymers. (19th July 2013)

• Record Type: Journal Article
• Authors: Gu, Weiyin; Zhao, Hui; Wei, Qingshuo; Coughlin, E. Bryan; Theato, Patrick; Russell, Thomas P.
• Is Part Of: Advanced materials. Volume 25:Number 34(2013)
• Page Start: 4690
• Page End: 4695
• Publication Date: 2013-07-19
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201301556
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A robust route for the preparation of nanoscopic line patterns</bold> from polystyrene‐<italic>block</italic>‐poly(ethylene oxide) featuring a photocleavable <italic>o</italic>‐nitrobenzyl ester junction is demonstrated. After mild UV (<italic>λ</italic> = 365 nm) exposure and selective removal of the PEO microdomains, the polymer trench patterns are used as scaffold to fabricate highly ordered arrays of silica or Au line patterns. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg36gzwr7f" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>