Line Patterns from Cylinder‐Forming Photocleavable Block Copolymers. (19th July 2013) - Gu, Weiyin
Abstract A robust route for the preparation of nanoscopic line patterns from polystyrene‐block‐poly(ethylene oxide) featuring a photocleavable o‐nitrobenzyl ester junction is demonstrated. After mild UV (λ = 365 nm) exposure and selective removal of the PEO microdomains, the polymer trench patterns are used as scaffold to fabricate highly ordered arrays of silica or Au line patterns.