Anisotropic Topological Surface States on High‐Index Bi2Se3 Films. (22nd January 2013)

• Record Type: Journal Article
• Authors: Xu, Zhongjie; Guo, Xin; Yao, Mengyu; He, Hongtao; Miao, Lin; Jiao, Lu; Liu, Hongchao; Wang, Jiannong; Qian, Dong; Jia, Jinfeng; Ho, Wingkin; Xie, Maohai
• Is Part Of: Advanced materials. Volume 25:Number 11(2013)
• Page Start: 1557
• Page End: 1562
• Publication Date: 2013-01-22
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201202936
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A high‐index topological insulator thin film, Bi₂Se₃(221)</bold>, is grown on a faceted InP(001) substrate by molecular‐beam epitaxy (see model in figure (a)). Angle‐resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1v8vjpx9" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>