Anisotropic Topological Surface States on High‐Index Bi2Se3 Films. (22nd January 2013) - Xu, Zhongjie
Abstract A high‐index topological insulator thin film, Bi2Se3(221), is grown on a faceted InP(001) substrate by molecular‐beam epitaxy (see model in figure (a)). Angle‐resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.