Room‐Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys. (26th October 2012)

• Record Type: Journal Article
• Authors: Puttisong, Yuttapoom; Buyanova, Irina A.; Ptak, Aaron J.; Tu, Charles W.; Geelhaar, Lutz; Riechert, Henning; Chen, Weimin M.
• Is Part Of: Advanced materials. Volume 25:Number 5(2013)
• Page Start: 738
• Page End: 742
• Publication Date: 2012-10-26
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201202597
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The first experimental demonstration of a spin amplifier at room temperature is presented</bold>. An efficient, defect‐enabled spin amplifier based on a non‐magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut‐off frequency of up to 1 GHz. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1v46xzw1" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>