Room‐Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys. (26th October 2012) - Puttisong, Yuttapoom
Abstract The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect‐enabled spin amplifier based on a non‐magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut‐off frequency of up to 1 GHz.