O2/HMDSO‐Plasma‐Deposited Organic–Inorganic Hybrid Film for Gate Dielectric of MgZnO Thin‐Film Transistor. Issue 1 (5th December 2013)

• Record Type: Journal Article
• Authors: Tsai, Chih‐Hung; Li, Yun‐Shiuan; Cheng, I‐Chun; Chen, Jian‐Zhang
• Is Part Of: Plasma processes and polymers. Volume 11:Issue 1(2014:Jan.)
• Page Start: 89
• Page End: 95
• Publication Date: 2013-12-05
• Subjects: Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201300107
• Languages: English
• ISSNs: 1612-8850

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="ppap201300107-sec-0001" sec-type="section"> <p>An organic–inorganic hybrid film is deposited from O₂/HMDSO plasma. The SiOSi/SiCH₃ FTIR absorption ratio of this film increases with the process power and O₂/HMDSO precursor flow ratio, resulting in a more inorganic‐like film. This hybrid film is used as the gate dielectric of MgZnO TFTs. As the SiOSi/SiCH₃ FTIR absorption ratio of the gate dielectric increases, the gate leakage current decreases, on/off current ratio increases, threshold voltage increases, and subthreshold swing increases. High SiCH₃ bonding content in the gate dielectric improves TFT switching but deteriorates gate insulation, resulting in increased gate leakage current and decreased on/off current ratio.<inline-graphic xlink:href="ark:/27927/pgg3zvzmt7h" content-type="ppap201300107-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </sec> </abstract>