Cite

    Hopstaken, M. J. P., Pfeiffer, D., Copel, M., Gordon, M. S., Ando, T., Narayanan, V., Jagannathan, H., Molis, S., Wahl, J. A., Bu, H., Sadana, D. K., Czornomaz, L., Marchiori, C., & Fompeyrine, J. (n.d.). physical characterization of sub‐32‐nm semiconductor materials and processes using advanced ion beam–based analytical techniques. Surface and interface analysis, 45, 338–344. http://access.bl.uk/ark:/81055/vdc_100024524354.0x000003