Constraint Annealing of HfO2 Films on Silicon Substrate: Suppression of Si Outward Emission. Issue 2 (10th January 2013)

• Record Type: Journal Article
• Authors: Shih, Chuan‐Feng; Hsiao, Chu‐Yun; Chen, Bo‐Cun; Hsiao, Yu‐Chih; Leu, Ching‐Chich; Paranthaman, P.
• Is Part Of: Journal of the American Ceramic Society. Volume 96:Issue 2(2013)
• Page Start: 376
• Page End: 378
• Publication Date: 2013-01-10
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12151
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" id="jace12151-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Flexural tensile and compressive constraints were applied mechanically to the 7.5 nm thick HfO₂ films on Si substrates to investigate the influences of stress on the Si outward emission behavior in Si/HfO₂ during annealing. The constraint stress inhibited further growth of the interfacial layer (IL) between HfO₂ and Si, suppressing the IL‐growth‐induced Si outward emission. This fact was associated with atomic rearrangement that was induced during constrained annealing, resulting in the formation of a robust HfO₂ layer with low oxygen vacancy. Such an HfO₂ layer effectively suppressed the inward diffusion of oxygen, the IL growth and the Si out‐diffusion.</p> </abstract>