Handbook of silicon carbide materials and devices. (2022)

• Record Type: Book
• Further Information: Note: Edited by Zhe Chuan Feng.
• Editors: Feng, Zhe Chuan
• Contents: Part: I General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974 Wolfgang J. Choyke 2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques Yuji Matsumoto 3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100) Devki N. Talwar 4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century Min Lu and Chengling Lu Part II: SiC Materials Growth and Processing 5. CVD of SiC Epilayers -- Basic Principles and Techniques Chin-Che Tin, Rongxiang Hu, Roman Drachev, Alireza Yaghoubi 6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system Yingxi Niu 7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties Hao-Hsiung Lin, Bin Xin, Zhe Chuan Feng, Ian T. Ferguson 8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source Yasuto Hijikata, Yu-ichiro Matsushita, Takeshi Ohshima Part III: SiC Materials Studies and Characterization 9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals Ian T. Ferguson, Zhi Ren Qiu, Lingyu Wan, Jeffrey Yiin, Benjamin Klein, Zhe Chuan Feng 10. Near-Infrared Luminescent Centers in Silicon Carbide Ivan G. Ivanov and Nguyen Tien Son 11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry Changcai Cui and Huihui Li 12. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon Tatiana S. Perova, Sergey A. Kukushkin, Andrey V. Osipov Part IV SiC Devices and Developments 13. 4H-SiC-Based Photodiodes for Ultraviolet Light Detection Weifeng Yang and Zhengyun Wu 14. SiC radiation detector based on metal–insulator-semiconductor structures Chong Chen, Yuping Jia, Xiaojuan Sun, Dabing Li 15. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction Gu Xu, Zhe Chuan Feng, Jeffrey Yiin, Vishal Saravade, Benjaminn Klein, Ian T. Ferguson
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2022
• Extent: 1 online resource, illustrations (black and white)
• Subjects: 621.38152; Electronics -- Materials; Silicon carbide -- Electric properties; Semiconductor films; Epitaxy
• Languages: English
• ISBNs: 9780429582059; 9780429583957
• Related ISBNs: 9780367188269
• Notes: Note: Includes bibliographical references and index.; Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.