III-V nitride semiconductors : applications and devices /: applications and devices. (2022)

• Record Type: Book
• Further Information: Note: Edited by Edward T. Yu, Omar Manasreh.
• Authors: Yu, Edward T
• Editors: Yu, Edward T; Manasreh, Mahmoud Omar
• Contents: 1. Ohmic Contacts to GaN; 2. Characterization of Schottky Contacts on Nitride Semiconductors; 3. Integration of GaN with Dissimilar Substrate Materials by Wafer Bonding and Laser Liftoff; 4. Spontaneous and Piezoelectric Polarization in Nitride Heterostructures; 5. AIGaN/GaN High Electron Mobility Transistors; 6. Two-dimensional Electron Gas Transport Properties in Nitride Heterostructures Field Effect Transistors (HFETS); 7. Electron Transport in Wide-bandgap Semiconductors and Heterostructures; 8. Gan Metal-semiconductor Field-effect Transistor; 9. Piezoelectric Effect in Group III Nitride Based Heterostructures and Quantum Well Structure; 10. AIGaInN MQW Laser Diodes; 11. Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Laser; 12. III-Nitride Based UV Photodetectors; 13.III-Nitride-Based UV Photodetectors; 14. AIGaN UV Photodetectors
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2022
• Extent: 1 online resource
• Subjects: 621.38152; Semiconductors -- Materials; Nitrides
• Languages: English
• ISBNs: 9781000723779
• Related ISBNs: 9781000715958
• Notes: Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.