GaN and related materials. (2021)

• Record Type: Book
• Further Information: Note: Edited by Stephen J. Pearton.
• Editors: Pearton, S. J
• Contents: 1. Plate Type Exchangers 2. Dynamic Systems 3. A Historical Survey of Research on Gallium Nitride 4. Growth of Group III Nitrides from Molecular Beams 5. Ternary Alloys 6. Optical Characterization of GaN and Related Materials 7. Theoretical Studies in GaN 8. GaAsN Alloys and GaN/GaAs Thin Layer Structures 9. The Contribution of Defects to the Electrical and Optical Properties of GaN 10. Growth of GaN Single Crystals Under High Nitrogen Pressure 11.Ion Implantation Doping and Isolation of III-Nitride Materials 12. High-Density ECR Etching of Group-III Nitrides 13. Contacts on III-Nitrides 14. III-V Nitride Based LEDs 15. III-V Nitride Electronic Devices 16. Physical Properties of the Bulk GaN Crystals Grown by the High-Pressure, High Temperature Method 17. Microstructure of Epitaxial III-V Nitride Thin Films 18. The Role of Hydrogen in GaN and Related Compounds
• Edition: 1st
• Publisher Details: Boca Raton : CRC Press
• Publication Date: 2021
• Extent: 1 online resource
• Subjects: 621.38152; Gallium nitride; Semiconductors
• Languages: English
• ISBNs: 9781000448429
• Related ISBNs: 9781000445695; 9781003211082
• Notes: Note: Description based on CIP data; resource not viewed.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.