Metalorganic vapor phase epitaxy (MOVPE) : growth, materials, properties and applications /: growth, materials, properties and applications. (2019)

• Record Type: Book
• Further Information: Note: Edited by Stuart Irvine and Peter Capper.
• Editors: Irvine, Stuart J. C; Capper, Peter
• Contents: List of Contributors xv Foreword xvii Series Preface xix Preface xxi Safety and Environment Disclaimer xxiii 1 Introduction to Metalorganic Vapor Phase Epitaxy 1; S.J.C. Irvine and P. Capper 1.1 Historical Background of MOVPE 1 1.2 Basic Reaction Mechanisms 4 1.3 Precursors 8 1.4 Types of Reactor Cell 9 1.5 Introduction to Applications of MOVPE 11 1.5.1 AlN for UV Emitters 11 1.5.2 GaAs/AlGaAs VCSELS 11 1.5.3 Multijunction Solar Cells 12 1.5.4 GaAs and InP Transistors for High‐Frequency Devices 13 1.5.5 Infrared Detectors 14 1.5.6 Photovoltaic and Thermophotovoltaic Devices 14 1.6 Health and Safety Considerations in MOVPE 15 1.7 Conclusions 16 References 16 2 Fundamental Aspects of MOVPE 19; G.B. Stringfellow 2.1 Introduction 19 2.2 Thermodynamics 20 2.2.1 Thermodynamics of MOVPE Growth 20 2.2.2 Solid Composition 24 2.2.3 Phase Separation 29 2.2.4 Ordering 31 2.3 Kinetics 35 2.3.1 Mass Transport 35 2.3.2 Precursor Pyrolysis 36 2.3.3 Control of Solid Composition 37 2.4 Surface Processes 40 2.4.1 Surface Reconstruction 41 2.4.2 Atomic‐Level Surface Processes 42 2.4.3 Effects of Surface Processes on Materials Properties 44 2.4.4 Surfactants 46 2.5 Specific Systems 52 2.5.1 AlGaInP 52 2.5.2 Group III Nitrides 53 2.5.3 Novel Alloys 56 2.6 Summary 59 References 60 3 Column III: Phosphides, Arsenides, and Antimonides 71; H. Hardtdegen and M. Mikulics 3.1 Introduction 71 3.2 Precursors for Column III Phosphides, Arsenides, and Antimonides 73 3.3 GaAs‐Based Materials 74 3.3.1 (AlGa)As/GaAs Properties and Deposition 74 3.3.2 GaInP, (AlGa)InP/GaAs Properties and Deposition 79 3.4 InP‐Based Materials 82 3.4.1 InP Properties and Deposition 82 3.4.2 AlInAs/GaInAs/AlGaInAs Properties and Deposition 83 3.4.3 AlInAs/GaInAs/InP Heterostructures 84 3.4.4 Inx Ga1–x Asy P1–y Properties and Deposition 84 3.5 Column III Antimonides Properties and Deposition 86 3.5.1 Deposition of InSb, GaSb, and AlSb 87 3.5.2 Deposition of Ternary Column III Alloys (AlGa)Sb and (GaIn)Sb 89 3.5.3 Deposition of Ternary Column V Alloys In(AsSb), GaAsSb 89 3.5.4 Deposition of Quaternary Alloys 90 3.5.5 Epitaxy of Electronic Device Structures 90 3.5.6 Epitaxy of Optoelectronic Device Structures 95 3.6 In Situ Optical Characterization/Growth Control 100 3.7 Conclusions 100 References 101 4 Nitride Semiconductors 109; A. Dadgar and M. Weyers 4.1 Introduction 109 4.2 Properties of III‐Nitrides 110 4.3 Challenges in the Growth of III‐Nitrides 111 4.3.1 Lattice and Thermal Mismatch 111 4.3.2 Ternary Alloys: Miscibility and Compositional Homogeneity 113 4.3.3 Gas‐Phase Prereactions 115 4.3.4 Doping of III‐Nitrides 117 4.4 Substrates 120 4.4.1 Heteroepitaxy on Foreign Substrates 122 4.4.2 GaN Growth on Sapphire 125 4.4.3 III‐N Growth on SiC 126 4.4.4 GaN Growth on Silicon 127 4.5 MOVPE Growth Technology 130 4.5.1 Precursors 130 4.5.2 Reactors and In Situ Monitoring 130 4.6 Economic Importance 136 4.6.1 Optoelectronic Devices 137 4.6.2 Electronic Devices 138 4.7 Conclusions 138 References 138 5 Metamorphic Growth and Multijunction III‐V Solar Cells 149; N.H. Karam, C.M. Fetzer, X.‐Q. Liu, M.A. Steiner, and K.L. Schulte 5.1 Introduction to MOVPE for Multijunction Solar Cells 149 5.1.1 III‐V PV Solar Cell Opportunities and Applications 149 5.1.2 Metamorphic Multijunction Solar Cells 151 5.1.3 Reactor Technology for Metamorphic Epitaxy 154 5.2 Upright Metamorphic Multijunction (UMM) Solar Cells 154 5.2.1 Introduction and History of Upright Metamorphic Multijunctions 154 5.2.2 MOVPE Growth Considerations of UMM 156 5.2.3 Growth and Device Results 158 5.2.4 Challenges and Future Outlook 162 5.3 Inverted Metamorphic Multijunction (IMM) Solar Cells 162 5.3.1 Introduction and History of Inverted Metamorphic Multijunctions 162 5.3.2 MOVPE Growth Considerations of IMM 164 5.3.3 Growth and Device Results 167 5.3.4 Challenges and Future Outlook 169 5.4 Conclusions 169 References 170 6 Quantum Dots 175; E. Hulicius, A. Hospodkov á, and M. Z íkov á 6.1 General Introduction to the Topic 175 6.1.1 Definition and History 175 6.1.2 Paradigm of Quantum Dots 176 6.1.3 QD Types 176 6.2 AIII BV Materials and Structures 178 6.2.1 QDs Embedded in the Structure 178 6.2.2 Semiconductor Materials for Embedded QDs 180 6.3 Growth Procedures 181 6.3.1 Comparison of MBE‐ and MOVPE‐Grown QDs 181 6.3.2 Growth Parameters 182 6.3.3 QD Surrounding Layers 185 6.4 In Situ Measurements 193 6.4.1 Reflectance Anisotropy Spectroscopy of QD Growth 193 6.4.2 Other Supporting In Situ Measurements 197 6.5 Structure Characterization 198 6.5.1 Optical: Photo‐, Magnetophoto‐, Electro‐luminescence, and Spin Detection 198 6.5.2 Microscopies – AFM, TEM, XSTM, BEEM/BEES 200 6.5.3 Electrical: Photocurrent, Capacitance Measurements 202 6.6 Applications 203 6.6.1 QD Lasers, Optical Amplifiers, and LEDs 204 6.6.2 QD Detectors, FETs, Photovoltaics, and Memories 205 6.7 Summary 208 6.8 Future Perspectives 208 Acknowledgment 209 References 209 7 III‐V Nanowires and Related Nanostructures: From Nitrides to Antimonides 217; H.J. Joyce 7.1 Introduction to Nanowires and Related Nanostructures 217 7.2 Geometric and Crystallographic Properties of III‐V Nanowires 219 7.2.1 Crystal Phase 219 7.2.2 Growth Direction, Morphology, and Side‐Facets 220 7.3 Particle‐Assisted MOVPE of Nanowires 222 7.3.1 The Phase of the Particle 222 7.3.2 The Role of the Particle 224 7.3.3 Axial and Radial Growth Modes 226 7.3.4 Self‐Assisted Growth 228 7.4 Selective‐Area MOVPE of Nanowires and Nanostructures 228 7.4.1 The Role of the Mask 229 7.4.2 Axial and Radial Growth Modes 230 7.5 Alternative Techniques for MOVPE of Nanowires 231 7.6 Novel Applications of Nanowires 231 7.7 Concluding Remarks 233 References 234 8 Monolithic III/V integration on (001) Si substrate 241; B. Kunert and K. Volz 8.1 Introduction 241 8.2 III/V‐Si Interface 243 8.2.1 Si Surfaces 243 8.2.2 Interface Formation in the Presence of Impurities and MO Precursors 247 8.2.3 Atomic III/V on Si Interface Structure 249 8.2.4 Antiphase Domains 251 8.2.5 III/V Growth on Si(001) 252 8.3 Heteroepitaxy of Bulk Layers on Si 255 8.3.1 Lattice‐Matched Growth on Si 257 8.3.2 Metamorphic Growth on Blanket Si 258 8.3.3 Selective‐Area Growth (SAG) on Si 264 8.4 Conclusions 282 References 282 9 MOVPE Growth of Cadmium Mercury Telluride and
• Edition: 1st
• Publisher Details: Hoboken, New Jersey : John Wiley & Sons, Inc
• Publication Date: 2019
• Extent: 1 online resource
• Subjects: 621.38152; Metal organic chemical vapor deposition
• Languages: English
• ISBNs: 9781119313038; 9781119313045
• Notes: Note: Includes bibliographical references and index.; Note: Description based on CIP data; resource not viewed.
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