Circadian rhythms for future resilient electronic systems : accelerated active self-healing for integrated circuits /: accelerated active self-healing for integrated circuits. ([2020])
- Record Type:
- Book
- Title:
- Circadian rhythms for future resilient electronic systems : accelerated active self-healing for integrated circuits /: accelerated active self-healing for integrated circuits. ([2020])
- Main Title:
- Circadian rhythms for future resilient electronic systems : accelerated active self-healing for integrated circuits
- Further Information:
- Note: Xinfei Guo and Mircea R. Stan.
- Authors:
- Guo, Xinfei
Stan, Mircea R - Contents:
- Intro; Preface; Acknowledgments; Contents; Acronyms; Part I Overview; 1 Introduction to Wearout; 1.1 Wearout in CMOS Circuits; 1.2 Existing Wearout Mitigation Techniques; 1.3 Overview of This Book; References; Part II Experimental Validations; 2 Accelerated and Active Self-healing Techniques for BTI Wearout; 2.1 Overview; 2.2 BTI Wearout and Recovery Basics; 2.3 Prior Work on BTI Recovery; 2.4 BTI Self-healing; 2.4.1 Accelerate and Activate BTI Recovery; 2.4.2 Gate-Level Analytical Model for Accelerated Active Self-healing; 2.5 Experimental Setup; 2.5.1 Test Platform; 2.5.2 Test Configuration 2.5.3 Test Conditions2.5.3.1 Stress and Recovery ``Knobs''; 2.5.3.2 Accelerated Test Methodology; 2.5.3.3 Test Cases; 2.5.4 Modeling BTI Stress and Recovery for FPGA Test Structures; 2.6 Test Results for Accelerated BTI Wearout; 2.6.1 AC Stress vs. DC Stress; 2.6.2 Effect of Temperature on BTI Wearout; 2.7 Test Results for Accelerated Active Self-healing Techniques; 2.7.1 Active Recovery with Negative Voltage; 2.7.2 Accelerated Recovery with High Temperature; 2.7.3 Model Validation; 2.8 Reversible vs. Irreversible BTI Wearout; 2.8.1 Fast Traps vs. Slow Traps: A Physics Perspective 2.8.2 Irreversible Wearout During Accelerated Self-healing2.8.3 Sequentiality of Reversible and Irreversible Wearout; 2.9 Frequency Dependency of BTI Wearout and Recovery; 2.9.1 Sleep with Accelerated Rejuvenation WhenGetting Tired; 2.9.2 Measurement Results; 2.9.3 Reduction of Necessary Design Margin; 2.9.4Intro; Preface; Acknowledgments; Contents; Acronyms; Part I Overview; 1 Introduction to Wearout; 1.1 Wearout in CMOS Circuits; 1.2 Existing Wearout Mitigation Techniques; 1.3 Overview of This Book; References; Part II Experimental Validations; 2 Accelerated and Active Self-healing Techniques for BTI Wearout; 2.1 Overview; 2.2 BTI Wearout and Recovery Basics; 2.3 Prior Work on BTI Recovery; 2.4 BTI Self-healing; 2.4.1 Accelerate and Activate BTI Recovery; 2.4.2 Gate-Level Analytical Model for Accelerated Active Self-healing; 2.5 Experimental Setup; 2.5.1 Test Platform; 2.5.2 Test Configuration 2.5.3 Test Conditions2.5.3.1 Stress and Recovery ``Knobs''; 2.5.3.2 Accelerated Test Methodology; 2.5.3.3 Test Cases; 2.5.4 Modeling BTI Stress and Recovery for FPGA Test Structures; 2.6 Test Results for Accelerated BTI Wearout; 2.6.1 AC Stress vs. DC Stress; 2.6.2 Effect of Temperature on BTI Wearout; 2.7 Test Results for Accelerated Active Self-healing Techniques; 2.7.1 Active Recovery with Negative Voltage; 2.7.2 Accelerated Recovery with High Temperature; 2.7.3 Model Validation; 2.8 Reversible vs. Irreversible BTI Wearout; 2.8.1 Fast Traps vs. Slow Traps: A Physics Perspective 2.8.2 Irreversible Wearout During Accelerated Self-healing2.8.3 Sequentiality of Reversible and Irreversible Wearout; 2.9 Frequency Dependency of BTI Wearout and Recovery; 2.9.1 Sleep with Accelerated Rejuvenation WhenGetting Tired; 2.9.2 Measurement Results; 2.9.3 Reduction of Necessary Design Margin; 2.9.4 Reduction of Tracking Power; 2.9.5 Average Performance Improvement; 2.9.6 Frequency Dependency Behavior of BTI Wearout; 2.10 Conclusions; References; 3 Accelerating and Activating Recovery Against EM Wearout; 3.1 Overview; 3.2 EM Wearout and Recovery Mechanisms 3.3 Prior Work on EM Recovery3.4 ``Reversing'' the Direction of EM Wearout; 3.5 Test Setup; 3.5.1 Test Structure; 3.5.2 Measurement Setup; 3.5.3 Test Cases; 3.6 Experimental Results for EM Active and Accelerated Recovery; 3.7 EM Signoff Considering Accelerated and Active Recovery; 3.7.1 Relaxing the EM Design Rules; 3.7.2 Performance Improvement; 3.7.3 Extending the Wire Lifetime; 3.8 Summary: EM vs. BTI; 3.9 Conclusions; References; Part III Implementing Self-healing on Chip; 4 Circuit Techniques for BTI and EM Acceleratedand Active Recovery; 4.1 Overview 4.2 Circuit Solutions for Activating and Accelerating BTI Recovery4.2.1 On-Chip Negative Voltage Generation; 4.2.2 Negative Bias Voltage in a Logic Path; 4.2.3 Wearout-Aware Power Gating; 4.2.4 On-Chip Heat Generation; 4.3 Circuit Solutions for Activating and Accelerating EM Recovery; 4.4 BTI Sensing; 4.4.1 Previous BTI Sensing Techniques; 4.4.2 Ring Oscillator-Based Test Structures for Separating NBTI and PBTI; 4.4.3 Metastable-Element-Based Embeddable BTI Sensors; 4.4.3.1 Sensor Scheme; 4.4.3.2 Sizing; 4.4.3.3 Proactive Recovery Case Simulation Results … (more)
- Publisher Details:
- Cham, Switzerland : Springer
- Publication Date:
- 2020
- Extent:
- 1 online resource, illustrations
- Subjects:
- 621.3815
Integrated circuits
Integrated circuits -- Design and construction
Metal oxide semiconductor field-effect transistors
Circadian rhythms
TECHNOLOGY & ENGINEERING / Mechanical
Electronic books
Electronic books - Languages:
- English
- ISBNs:
- 9783030200510
3030200515 - Related ISBNs:
- 9783030200503
- Notes:
- Note: Includes bibliographical references and index.
Note: Online resource; title from PDF title page (EBSCO, viewed June 17, 2019). - Access Rights:
- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
- Access Usage:
- Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD.DS.432618
- Ingest File:
- 02_550.xml