Electrical properties of indium arsenide nanowires and their field-effect transistors. ([2018])

• Record Type: Book
• Further Information: Note: Mengqi Fu.
• Other Names: Fu, Mengqi
• Contents: Intro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following journal articles:; Acknowledgements; Contents; 1 Introduction; 1.1 Advantages of InAs Nanowire-Based Electronic Devices; 1.1.1 Advantages of InAs Material for Fabricating High-Performance Electronic Devices; 1.1.2 Advantages of InAs Nanowires in Making Multi-gate and Gate-All-Around Devices; 1.2 Crystal Structure of InAs Nanowires; 1.3 Development Status of InAs Nanowire Electronic Devices; 1.3.1 InAs Nanowire MOSFETs; 1.3.2 InAs Nanowire TFETs 1.4 Several Problems of InAs Nanowire-Based Electronic Devices1.4.1 High OFF-State Current of Devices; 1.4.2 Interface State Between InAs Nanowires and Gate Dielectric; 1.4.3 Relation Between Structure of InAs Nanowires and Their Device Performance; 1.4.4 Dispersion of Device Performance; 1.5 Topic Ideas and Chapter Arrangements; References; 2 Fabrication, Characterization and Parameter Extraction of InAs Nanowire-Based Device; 2.1 Growth of InAs Nanowires; 2.2 Characterization, Device Fabricating and Electrical Measurement Equipment of Nanowires; 2.2.1 Characterization Equipment 2.2.2 Apparatus for Device Fabrication2.2.3 Apparatus to Characterize the Electrical Properties of Devices; 2.3 Fabrication Processes of InAs Nanowires Devices; 2.3.1 Dispersion and Transfer of InAs Nanowires; 2.3.2 General Fabrication Process for Planar InAs Nanowire Devices; 2.3.3 Fabrication Process for Suspended InAs Nanowire Devices; 2.4 Measurement and Characterization of InAs Nanowire Devices; 2.5 Extraction of Basic Electrical Parameters of InAs Nanowires Based on FETs; References; 3 The Impact of Quantum Confinement Effects on Electrical Properties of InAs Nanowires 3.1 Growth of Ultrathin InAs Nanowire3.2 High-Performance Device Based on Ultrathin InAs Nanowires; 3.3 Influences of Diameter on the InAs Nanowire Devices; 3.3.1 Influences of Diameter on the OFF-State Performance of InAs Nanowire Devices; 3.3.2 Larger Bandgap Induced by Smaller Diameter of InAs Nanowires; 3.3.3 Influence of Diameter on ON-State Performance of InAs Nanowire Devices; 3.4 Summary; References; 4 Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires; 4.1 Growth of InAs Nanowires in Different Orientations 4.2 Method of Transferring Nanowires in Devices to TEM for Structural Characterization4.3 Determination of the Crystal Orientation; 4.4 Influence of Crystal Phase and Orientation on the Electrical Transport Properties of InAs Nanowires at Room Temperature; 4.4.1 Comparison of Device Performance with Different Crystal Structure; 4.4.2 Statistical Analysis on Device Parameters; 4.5 Influence of Crystal Phase and Crystal Orientation of InAs Nanowires on Electrical Transport Properties at Low Temperature
• Publisher Details: Singapore : Springer
• Publication Date: 2018
• Extent: 1 online resource
• Subjects: 621.3815; Nanowires; Field-effect transistors; Nanoscale Science and Technology; Nanotechnology and Microengineering; Semiconductors; Characterization and Evaluation of Materials; Electronic Circuits and Devices; Optical and Electronic Materials; Field-effect transistors; Nanowires; Electronic books
• Languages: English
• ISBNs: 9789811334443; 9811334447
• Related ISBNs: 9789811334436; 9811334439
• Notes: Note: Includes bibliographical references.; Note: Description based on online resource; title from digital title page (viewed on December 27, 2018).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.