Physical design and mask synthesis for directed self-assembly lithography. (2018)
- Record Type:
- Book
- Title:
- Physical design and mask synthesis for directed self-assembly lithography. (2018)
- Main Title:
- Physical design and mask synthesis for directed self-assembly lithography
- Further Information:
- Note: Seongbo Shim, Youngsoo Shin.
- Authors:
- Shim, Seongbo
Shin, Youngsoo - Contents:
- Intro; Preface; Contents; Acronyms; 1. Introduction; 1.1. Optical Lithography; 1.2. Next Generation Lithography Technologies; 1.2.1. Extreme Ultraviolet Lithography (EUVL); 1.2.2. Electron Beam Lithography (EBL); 1.2.3. Nanoimprint Lithography (NIL); 1.3. Directed Self-Assembly Lithography (DSAL); 1.4. Overview of the Book; References; Part I. Physical Design Optimizations; 2. DSAL Manufacturability; 2.1. DSA Defect; 2.1.1. DSAL for IC Design and Fabrication; 2.1.2. Lithography-Induced DSA Defect; 2.2. DSA Defect Probability; 2.2.1. Definition; 2.2.2. Defect Probability Computation. 2.3. Experimental Observations; 2.4. Summary; References; 3. Placement Optimization for DSAL; 3.1. Introduction; 3.2. Defect Probability of Cell Pair; 3.3. Post-Placement Optimization; 3.3.1. Cell Flipping; 3.3.2. Cell Swapping and Flipping; 3.4. Automatic Placement; 3.4.1. Implementation of Placer; 3.4.2. Considerations on Analytical Placer; 3.5. Experiments; 3.6. Summary; References; 4. Post-Placement Optimization for MP-DSAL Compliant Layout; 4.1. Introduction; 4.2. MP-DSAL Decomposition; 4.3. Post-Placement Optimization; 4.3.1. MP-DSAL Decomposition of Standard Cells. 4.3.2. Placement Optimization for Cell Row; 4.3.3. Considerations of Interrow Conflict; 4.4. Experiments; 4.5. Summary; References; 5. Redundant Via Insertion for DSAL; 5.1. Introduction; 5.2. Preliminaries; 5.2.1. Defect Probability of Via Cluster; 5.2.2. Basic Redundant Via Insertion; 5.3. DSAL Redundant Via InsertionIntro; Preface; Contents; Acronyms; 1. Introduction; 1.1. Optical Lithography; 1.2. Next Generation Lithography Technologies; 1.2.1. Extreme Ultraviolet Lithography (EUVL); 1.2.2. Electron Beam Lithography (EBL); 1.2.3. Nanoimprint Lithography (NIL); 1.3. Directed Self-Assembly Lithography (DSAL); 1.4. Overview of the Book; References; Part I. Physical Design Optimizations; 2. DSAL Manufacturability; 2.1. DSA Defect; 2.1.1. DSAL for IC Design and Fabrication; 2.1.2. Lithography-Induced DSA Defect; 2.2. DSA Defect Probability; 2.2.1. Definition; 2.2.2. Defect Probability Computation. 2.3. Experimental Observations; 2.4. Summary; References; 3. Placement Optimization for DSAL; 3.1. Introduction; 3.2. Defect Probability of Cell Pair; 3.3. Post-Placement Optimization; 3.3.1. Cell Flipping; 3.3.2. Cell Swapping and Flipping; 3.4. Automatic Placement; 3.4.1. Implementation of Placer; 3.4.2. Considerations on Analytical Placer; 3.5. Experiments; 3.6. Summary; References; 4. Post-Placement Optimization for MP-DSAL Compliant Layout; 4.1. Introduction; 4.2. MP-DSAL Decomposition; 4.3. Post-Placement Optimization; 4.3.1. MP-DSAL Decomposition of Standard Cells. 4.3.2. Placement Optimization for Cell Row; 4.3.3. Considerations of Interrow Conflict; 4.4. Experiments; 4.5. Summary; References; 5. Redundant Via Insertion for DSAL; 5.1. Introduction; 5.2. Preliminaries; 5.2.1. Defect Probability of Via Cluster; 5.2.2. Basic Redundant Via Insertion; 5.3. DSAL Redundant Via Insertion Algorithm; 5.3.1. Graph Modeling; 5.3.2. Heuristic Insertion Algorithm; 5.4. Experiments; 5.5. Summary; References; 6. Redundant Via Insertion for MP-DSAL; 6.1. Introduction; 6.2. Simultaneous Optimization of Redundant Via and Via Cluster; 6.2.1. ILP Formulation; 6.2.2. Graph-Based Heuristic. 6.3. Experiments; 6.4. Summary; References; Part II. Mask Synthesis and Optimizations; 7. DSAL Mask Synthesis; 7.1. Introduction; 7.2. Inverse DSA; 7.2.1. Numerical Results; 7.3. Inverse Lithography; 7.3.1. Approximation of Cost Gradient; 7.3.2. Evaluation; 7.4. Mask Design with Process Variations; 7.4.1. Inverse DSA and Inverse Lithography; 7.4.2. Insertion of DSA-Aware Assist Feature; 7.4.3. Assessment; 7.5. Summary; References; 8. Verification of Guide Patterns; 8.1. Introduction; 8.2. Test GPs; 8.2.1. Preparation of GPs; 8.2.2. Evaluation of GP Coverage; 8.3. Preparing a GP Using Geometric Parameters. 8.3.1. Geometric Parameters; 8.3.2. Principal Component Analysis; 8.3.3. Experimental Observations; 8.4. Constructing a Verification Function; 8.5. Experimental Assessment; 8.5.1. Choice of Parameters; 8.5.2. Parameter Reduction; 8.5.3. Comparison of GP Verification Methods; 8.5.4. A Global Verification Function; 8.6. Conclusions; References; 9. Cut Optimization; 9.1. Introduction; 9.2. Preliminaries; 9.2.1. Critical Cut Distances in MP-DSAL; 9.2.2. Wire Extension: Impact on Circuit Timing; 9.3. MP-DSAL Cut Optimization; 9.3.1. ILP Formulation; 9.3.2. Heuristic Algorithm; 9.4. Experiments; 9.5. Conclusion. … (more)
- Publisher Details:
- Cham, Switzerland : Springer
- Publication Date:
- 2018
- Extent:
- 1 online resource (xiv, 138 pages), illustrations (some color)
- Subjects:
- 621.3815
Materials science
Integrated circuits -- Design and construction
Integrated circuits -- Masks
Self-assembly (Chemistry)
Lithography
TECHNOLOGY & ENGINEERING -- Mechanical
Integrated circuits -- Design and construction
Integrated circuits -- Masks
Lithography
Self-assembly (Chemistry)
Technology & Engineering -- Nanotechnology & MEMS
Technology & Engineering -- Electronics -- Circuits -- General
Technology & Engineering -- Material Science
Science -- Nanostructures
Technology & Engineering -- Electronics -- Semiconductors
Precision instruments manufacture
Circuits & components
Electronic devices & materials
Nanotechnology
Semi-conductors & super-conductors
Nanotechnology
Engineering
Systems engineering
Optical materials
Electronic books - Languages:
- English
- ISBNs:
- 9783319762944
- Related ISBNs:
- 331976294X
9783319762937
3319762931 - Notes:
- Note: Includes bibliographical references and index.
Note: Online resource; title from PDF title page (SpringerLink, viewed March 28, 2018). - Access Rights:
- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
- Access Usage:
- Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.
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- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD.DS.374344
- Ingest File:
- 02_354.xml