Non-logic devices in logic processes. ([2017])
- Record Type:
- Book
- Title:
- Non-logic devices in logic processes. ([2017])
- Main Title:
- Non-logic devices in logic processes
- Further Information:
- Note: Yanjun Ma, Edwin Kan.
- Authors:
- Ma, Yanjun
Kan, Edwin - Contents:
- Preface; Organization of This Book; Acknowledgements; Contents; Abbreviations; About the Authors; Part I: Basics; Chapter 1: Introduction; 1.1 The Semiconductor Industry; 1.2 Mooreś Law and Its Corollaries; 1.3 Aim and Scope of This Book; References; Chapter 2: Overview of Logic CMOS Devices; 2.1 Basic CMOS Devices and Processes; 2.1.1 Diodes; 2.1.2 Capacitors; 2.1.3 Resistors; 2.1.4 Bipolar Transistors; 2.1.5 MOSFETs; 2.2 Physics of Diodes; 2.2.1 The p-n JunctionDiode; 2.2.2 Current-Voltage Characteristics; 2.2.3 Junction Breakdowns; 2.2.4 Schottky Diodes. 2.3 MOS Capacitors and Oxide Device Physics2.3.1 MOS Capacitors; 2.3.2 Gate Tunneling Current; 2.3.3 Oxide Reliability; 2.4 MOSFET Physics; 2.4.1 Basic Long-Channel MOSFET Equations; 2.4.2 Capacitances of MOSFET; 2.4.3 Nonideal Effects; 2.4.4 Hot Carrier Reliability of MOSFET; 2.5 CMOS Circuits and Power Consumption; 2.6 Non-logic CMOS Devices Discussed in This Book; References; Chapter 3: Overview of Logic CMOS Processes; 3.1 Generic Logic CMOS Processes; 3.1.1 Introduction; 3.1.2 Process Flow and Mask Design; 3.2 Layout and Mask Generation; 3.3 Design Rules. 3.4 Extension of Logic CMOS Processes3.5 Process Control; 3.6 Postprocessing; 3.6.1 Dicing; 3.6.2 3D IC Integration and Through Silicon Via; 3.7 Wafer Processing Economics; 3.7.1 Wafer Processing Cost; 3.7.2 Yield; 3.7.3 Cost of Chips; References; Part II: Non-logic Device Design in Logic Processes; Chapter 4: Non-logic MOSFETs in Logic CMOS Processes; 4.1Preface; Organization of This Book; Acknowledgements; Contents; Abbreviations; About the Authors; Part I: Basics; Chapter 1: Introduction; 1.1 The Semiconductor Industry; 1.2 Mooreś Law and Its Corollaries; 1.3 Aim and Scope of This Book; References; Chapter 2: Overview of Logic CMOS Devices; 2.1 Basic CMOS Devices and Processes; 2.1.1 Diodes; 2.1.2 Capacitors; 2.1.3 Resistors; 2.1.4 Bipolar Transistors; 2.1.5 MOSFETs; 2.2 Physics of Diodes; 2.2.1 The p-n JunctionDiode; 2.2.2 Current-Voltage Characteristics; 2.2.3 Junction Breakdowns; 2.2.4 Schottky Diodes. 2.3 MOS Capacitors and Oxide Device Physics2.3.1 MOS Capacitors; 2.3.2 Gate Tunneling Current; 2.3.3 Oxide Reliability; 2.4 MOSFET Physics; 2.4.1 Basic Long-Channel MOSFET Equations; 2.4.2 Capacitances of MOSFET; 2.4.3 Nonideal Effects; 2.4.4 Hot Carrier Reliability of MOSFET; 2.5 CMOS Circuits and Power Consumption; 2.6 Non-logic CMOS Devices Discussed in This Book; References; Chapter 3: Overview of Logic CMOS Processes; 3.1 Generic Logic CMOS Processes; 3.1.1 Introduction; 3.1.2 Process Flow and Mask Design; 3.2 Layout and Mask Generation; 3.3 Design Rules. 3.4 Extension of Logic CMOS Processes3.5 Process Control; 3.6 Postprocessing; 3.6.1 Dicing; 3.6.2 3D IC Integration and Through Silicon Via; 3.7 Wafer Processing Economics; 3.7.1 Wafer Processing Cost; 3.7.2 Yield; 3.7.3 Cost of Chips; References; Part II: Non-logic Device Design in Logic Processes; Chapter 4: Non-logic MOSFETs in Logic CMOS Processes; 4.1 Introduction; 4.2 MOSFETs with Nonstandard Threshold Voltages; 4.2.1 Bandgap-Engineered MOSFETs; 4.2.2 Bandgap FET Application: Voltage Reference Circuit; 4.2.3 Source-Drain-Engineered MOSFET; 4.3 High-Voltage MOSFET; 4.3.1 Introduction. 4.3.2 LDMOS4.3.3 Improving High-Voltage Performance; 4.3.4 Manufacturing Challenges; References; Chapter 5: Floating-Gate Devices in Logic CMOS Processes; 5.1 Introduction; 5.2 Floating-Gate Transistors; 5.3 Floating-Gate Capacitor; 5.4 Semifloating Embedded DRAM Cell; 5.5 Concluding Remarks; References; Chapter 6: Bipolar Transistors in Logic CMOS Processes; 6.1 Introduction; 6.2 Parasitic Bipolar Transistors; 6.3 Reference Circuits Using Parasitic BJTs; 6.4 Punchthrough Transistor; References; Chapter 7: Diodes in Logic CMOS Processes; 7.1 Introduction; 7.2 Polysilicon Diodes. 7.2.1 Polysilicon Resistors7.3 Schottky Diodes; References; Part III: Selected Applications; Chapter 8: Logic Nonvolatile Memory; 8.1 Introduction to Embedded NVM; 8.2 Logic NVM; 8.3 Programming and Erase Methods; 8.4 Memory Cell Design Considerations; 8.5 Memory Arrays; 8.5.1 High-Voltage Generators; 8.5.2 Row and Column Decoders; 8.5.3 Sense Amplifiers; 8.6 Memory Reliability; 8.6.1 Data Retention; 8.6.2 Program/Erase Endurance; 8.6.3 Disturb; 8.6.4 Improving Data Retention Reliability; 8.7 An Application of LNVM; References; Chapter 9: One-Time Programmable Memories in Logic Processes. … (more)
- Publisher Details:
- Cham, Switzerland : Springer
- Publication Date:
- 2017
- Copyright Date:
- 2017
- Extent:
- 1 online resource (xxii, 284 pages), color illustrations
- Subjects:
- 621.38152
Engineering
Metal oxide semiconductors, Complementary
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors
Metal oxide semiconductors, Complementary
Engineering
Circuits and Systems
Electronic Circuits and Devices
Electronics and Microelectronics, Instrumentation
Technology & Engineering -- Electronics -- Circuits -- General
Technology & Engineering -- Electronics -- General
Circuits & components
Electronics engineering
Systems engineering
Electronics
Electronic books - Languages:
- English
- ISBNs:
- 9783319483399
3319483390 - Related ISBNs:
- 9783319483375
3319483374 - Notes:
- Note: Includes bibliographical references.
Note: Online resource; title from PDF title page (EBSCO, viewed April 7, 2017). - Access Rights:
- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
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- British Library HMNTS - ELD.DS.364459
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