Measurement and modeling of silicon heterostructure devices. (2018)

• Record Type: Book
• Further Information: Note: Edited by John D. Cressler.
• Other Names: Cressler, John D
• Contents: Contents ; Measurement and Modeling ; Overview: Measurement and Modeling; J.D. Cressler ; Best-Practice AC Measurement Techniques; R.A. Groves ; Industrial Application of TCAD for SiGe Development; D.C. Sheridan, J.B. Johnson, and R. Krishnasamy ; Compact Modeling of SiGe HBTs: HICUM; M. Schröter ; Compact Modeling of SiGe HBTs: MEXTRAM; S. Mijalkovic ; CAD Tools and Design Kits; S.E. Strang ; Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs; R. Singh ; Transmission Lines on Si; Y.V. Tretiakov ; Improved De-Embedding Techniques; Q. Liang
• Publisher Details: Place of publication not identified : CRC Press
• Publication Date: 2018
• Extent: 1 online resource (200 pages), (9 illustrations)
• Subjects: 621.38152; Bipolar transistors -- Mathematical models; Bipolar transistors; Heterostructures; Integrated circuits -- Design and construction
• Languages: English
• ISBNs: 9781351834766; 1351834762
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.