Epitaxial growth of III-nitride compounds : computational approach /: computational approach. ([2018])

• Record Type: Book
• Further Information: Note: Takashi Matsuoka, Yoshihiro Kangawa, editors.
• Editors: Matsuoka, Takashi, 1947-; Kangawa, Yoshihiro
• Contents: Intro; Preface; Contents; Contributors; 1 Introduction; 1.1 Purpose of the Book; 1.2 Outline of the Book; References; Fundamentals of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 2 Computational Methods; 2.1 Ab Initio Calculations; 2.1.1 Density-Functional Theory; 2.1.2 Plane-Wave Basis Set; 2.1.3 Ab Initio Pseudopotential Method; 2.2 Empirical Interatomic Potentials; 2.3 Monte Carlo Simulations; References; 3 Fundamental Properties of III-Nitride Compounds; 3.1 Crystal Structure and Structural Stability; 3.2 Electronic Band Structure. 3.3 Miscibility of III-Nitride Alloy Semiconductors3.4 Dislocation Core Structures; 3.5 Compositional Inhomogeneity Around Threading Dislocations; References; 4 Fundamental Properties of III-Nitride Surfaces; 4.1 Surface Phase Diagram Calculations; 4.2 Surface Reconstructions on III-Nitride Compounds; 4.2.1 Polar AlN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces; 4.2.2 Nonpolar AlN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.3 Semipolar AlN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces. 4.2.4 Polar GaN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces4.2.5 Nonpolar GaN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.6 Semipolar GaN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.7 Polar InN\left({0001} \right) and \left({000\bar{1}} \right) Surfaces; 4.2.8 Nonpolar InN\left({1\bar{1}00} \right) and \left({11\bar{2}0} \right) Surfaces; 4.2.9 Semipolar InN\left({1\bar{1}01} \right) and \left({11\bar{2}0} \right) Surfaces; 4.3 Hydrogen Adsorption on III-Nitride Compounds. 4.3.1 Structures of AlN Surfaces with Hydrogen4.3.2 Surface Phase Diagrams for Hydrogen Adsorption on AlN Surfaces; 4.3.3 Structures of GaN Surfaces with Hydrogen; 4.3.4 Surface Phase Diagrams for Hydrogen Adsorption on GaN Surfaces; 4.3.5 Structures of InN Surfaces with Hydrogen; 4.3.6 Surface Phase Diagrams for Hydrogen Adsorption on InN Surfaces; References; Applications of Computational Approach to Epitaxial Growth of III-Nitride Compounds; 5 Thermodynamic Approach to InN Epitaxy; 5.1 Thermodynamic Approach; 5.1.1 Modeling InN MOVPE; 5.1.2 Surface Energy Calculation. 5.2 Surface Phase Diagram of InN Under MOVPE Condition5.3 Growth of InN by Pressurized-Reactor MOVPE; References; 6 Atomic Arrangement and In Composition in InGaN Quantum Wells; 6.1 Atomic Arrangement in InGaN; 6.1.1 Stability of Tetrahedral Clusters; 6.1.2 Monte Carlo Simulation of InGaN MOVPE; 6.2 In Incorporation in InGaN QWs; 6.2.1 Effective Enthalpy of Mixing of Coherently Grown InGaN Layers; 6.2.2 Thermodynamic Analysis of InGaN Hetero-Epitaxy; References; 7 Initial Epitaxial Growth Processes of III-Nitride Compounds; 7.1 Adatom Kinetics on AlN Polar Surfaces During MOVPE.
• Publisher Details: Cham, Switzerland : Springer
• Publication Date: 2018
• Copyright Date: 2018
• Extent: 1 online resource
• Subjects: 621.38152; Materials science; Nitrides; Epitaxy; TECHNOLOGY & ENGINEERING -- Mechanical; Epitaxy; Nitrides; Technology & Engineering -- Electronics -- Semiconductors; Science -- Mathematical Physics; Technology & Engineering -- Material Science; Science -- Crystallography; Semi-conductors & super-conductors; Mathematical physics; Materials science; Condensed matter physics (liquid state & solid state physics); Optical materials; Surfaces (Physics); Crystallography; Electronic devices & materials; Electronic books
• Languages: English
• ISBNs: 9783319766416; 3319766414
• Related ISBNs: 9783319766409; 3319766406
• Notes: Note: Includes bibliographical references and index.; Note: Online resource; title from PDF title page (SpringerLink, viewed April 24, 2018).
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.