Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors. ([2018])
- Record Type:
- Book
- Title:
- Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors. ([2018])
- Main Title:
- Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors
- Further Information:
- Note: Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao, authors ; Andreas Oechsner, editor.
- Authors:
- Dinh, Toan
Nguyễn, Nam Trung
Dao, Dzung Viet - Contents:
- Intro; Preface; Acknowledgements; Contents; 1 Introduction to SiC and Thermoelectrical Properties; 1.1 Background; 1.2 Silicon Carbide; 1.3 Growth of SiC; 1.4 Thermoelectrical Properties; 1.5 High-Temperature SiC MEMS Sensors; References; 2 Fundamentals of Thermoelectrical Effect in SiC; 2.1 Thermoresistive Effect; 2.1.1 Physical Parameters and Definitions in Semiconductors; 2.1.2 Single-Crystalline SiC; 2.1.3 Polycrystalline SiC; 2.1.4 Amorphous SiC; 2.2 Thermoelectronic Effects; 2.3 Thermocapacitive Effect; 2.4 Thermoelectric Effect 2.5 Recent Advances in Characterisation of Thermoelectrical Effects in SiC at High Temperatures2.5.1 Experimental Set-up for Characterisation of Thermoelectrical Effect; 2.5.2 Thermoresistive Effect in Single Layer of SiC; 2.5.3 Thermoelectrical Effect in Multi-layers of SiC; 2.6 4H-SiC p-n Junctions; 2.7 Other Thermoelectrical Effects at High Temperatures; 2.7.1 Thermoelectric Effect; 2.7.2 Thermocapacitive Effect; References; 3 Desirable Features for High-Temperature SiC Sensors; 3.1 Sensitivity; 3.2 Linearity; 3.3 Thermal Time Response; 3.4 Low Power Consumption 3.5 Stability and Other Desirable FeaturesReferences; 4 Fabrication of SiC MEMS Sensors; 4.1 Growth and Doping; 4.1.1 Growth of SiC; 4.1.2 Doping of SiC; 4.2 Etching of SiC; 4.2.1 Electrochemical Etching; 4.2.2 Chemical Etching; 4.2.3 Dry Etching or Reactive-Ion Etching (RIE); 4.3 Ohmic and Schottky Contacts to SiC; 4.3.1 Ohmic Contact; 4.3.2 Schottky Contact; 4.4 FabricationIntro; Preface; Acknowledgements; Contents; 1 Introduction to SiC and Thermoelectrical Properties; 1.1 Background; 1.2 Silicon Carbide; 1.3 Growth of SiC; 1.4 Thermoelectrical Properties; 1.5 High-Temperature SiC MEMS Sensors; References; 2 Fundamentals of Thermoelectrical Effect in SiC; 2.1 Thermoresistive Effect; 2.1.1 Physical Parameters and Definitions in Semiconductors; 2.1.2 Single-Crystalline SiC; 2.1.3 Polycrystalline SiC; 2.1.4 Amorphous SiC; 2.2 Thermoelectronic Effects; 2.3 Thermocapacitive Effect; 2.4 Thermoelectric Effect 2.5 Recent Advances in Characterisation of Thermoelectrical Effects in SiC at High Temperatures2.5.1 Experimental Set-up for Characterisation of Thermoelectrical Effect; 2.5.2 Thermoresistive Effect in Single Layer of SiC; 2.5.3 Thermoelectrical Effect in Multi-layers of SiC; 2.6 4H-SiC p-n Junctions; 2.7 Other Thermoelectrical Effects at High Temperatures; 2.7.1 Thermoelectric Effect; 2.7.2 Thermocapacitive Effect; References; 3 Desirable Features for High-Temperature SiC Sensors; 3.1 Sensitivity; 3.2 Linearity; 3.3 Thermal Time Response; 3.4 Low Power Consumption 3.5 Stability and Other Desirable FeaturesReferences; 4 Fabrication of SiC MEMS Sensors; 4.1 Growth and Doping; 4.1.1 Growth of SiC; 4.1.2 Doping of SiC; 4.2 Etching of SiC; 4.2.1 Electrochemical Etching; 4.2.2 Chemical Etching; 4.2.3 Dry Etching or Reactive-Ion Etching (RIE); 4.3 Ohmic and Schottky Contacts to SiC; 4.3.1 Ohmic Contact; 4.3.2 Schottky Contact; 4.4 Fabrication Processes of SiC MEMS Sensors; 4.4.1 Surface Micromachining; 4.4.2 Bulk Micromachining; 4.4.3 Fabrication of MEMS Device with Integrated Cooling System; References 5 Impact of Design and Process on Performance of SiC Thermal Devices5.1 Substrate Influence; 5.2 Doping Influence; 5.3 Morphologies; 5.4 Deposition Temperature; 5.5 Geometry and Dimension; References; 6 Applications of Thermoelectrical Effect in SiC; 6.1 Temperature Sensors, Temperature Control/Compensation and Thermal Measurement; 6.1.1 Thermistors; 6.1.2 p-n Junction Temperature Sensors; 6.2 Thermal Flow Sensors; 6.2.1 Hot-Wire and Hot-Film Flow Sensors; 6.2.2 Calorimetric Flow Sensors; 6.2.3 Time-of-Flight Flow Sensors; 6.3 Convective Accelerometers and Gyroscopes 6.3.1 Convective Accelerometers6.3.2 Convective Gyroscopes; 6.4 Other Applications; 6.4.1 Combustible Gas Sensors; 6.4.2 SiC MEMS with Integrated Heating, Sensing and Microfluidic Cooling; References; 7 Future Prospects of SiC Thermoelectrical Sensing Devices; 7.1 Novel Platforms of SiC Films on Insulation Substrates; 7.2 Integration of SiC Thermoelectrical Devices with Other Materials and Devices; 7.3 SiC Thermal Actuators; 7.4 Challenges and Future Developments of SiC Sensing Devices; References … (more)
- Publisher Details:
- Singapore : Springer
- Publication Date:
- 2018
- Copyright Date:
- 2018
- Extent:
- 1 online resource
- Subjects:
- 621.38152
Materials science
Silicon carbide -- Thermal properties
Thermoelectricity
TECHNOLOGY & ENGINEERING / Mechanical
Technology & Engineering -- Nanotechnology & MEMS
Science -- Solid State Physics
Precision instruments manufacture
Spectrum analysis, spectrochemistry, mass spectrometry
Nanotechnology
Engineering
Nanotechnology
Electronic books - Languages:
- English
- ISBNs:
- 9789811325717
9811325715 - Related ISBNs:
- 9789811325700
9811325707 - Notes:
- Note: Includes bibliographical references.
Note: Online resource; title from PDF title page (EBSCO, viewed October 10, 2018). - Access Rights:
- Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
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- British Library HMNTS - ELD.DS.337734
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