Narrow Gap Semiconductors : Proceedings of the 12th International Conference on Narrow Gap Semiconductors /: Proceedings of the 12th International Conference on Narrow Gap Semiconductors. (2006)

• Record Type: Book
• Further Information: Note: Editors, Junichiro Kono, Jean Leotin.
• Editors: Kono, Junichiro; Leotin, Jean
• Contents: Cover; Half Title; Title Page; Copyright Page; Preface; Sponsors; Committees and Organizers; The Conference in Figures; Contents; Part I -- Spin-related phenomena; Ferrornagnetism in narrow gap sen~iconductors; Growth. magnetic and transport studies of ferromagnetic GaSbsemiconductors; (Eu, Gd)Te ferromagnetic semiconductor layers -- MBE growth, magneticand structural characterization; Electrical and magnetlc characterizat~on of lmpurlty state\ in dllutedmagnetlc semiconducto~sP b, *Ge, Te Cr; Omnidirectional spin lifetime enhancement for spin device applications Side-gate control of Rashba spin-orbit coupling in channels at narsow gap hetero-junctionsKlnetlc and zero electric field confinement and Ra5hba phtt~ngIn gated HgCdTe accumulation lajers; Spin splitting in Ga1-x AlxAps arabolic quantunl wells controlled by; Anomalous spin splitting of shallow donor bound electrons in InAs-based; Investigation of electron spln states In InGaAs/InAlAs and InGaSb/InAlSb heterostructures; Weak anti-localization in Sn-doped InSb thin film layers on GaAs(lO0); Determining the spin Hall conductance via charge current and noise Part II -- Growth, fabrication, characterization & theoryInSb/InAs type II quantum dot structures for mid-IR laser applications; Sb-based nanostructures for mid-IR applications; Phonons in InGaAsIAlGaAs quantum dot superlattices: a Raman study; Electronic Raman scattering in self-organized InAs quantum dot structures; Selection-rule breaking of Raman scatterlnp in InSb th~nfi lmy grownon GaAs(001); Influence of growth conditions on the optical and electrical properties of MOVPE-grown InAs1-x Shx; InSb, InAs and In2O3 nanowires grown by vapour transport with aid of FIB Ga ions Electrical and optical properties of hydrogen-passivated GaSbSpectral study of persistent photoconductivity in InAsIAlSb QW; Room-temperature electrolumlnescence of A I SbIINAs, , Sbx quantum uells; Application of quantum cascade lasers for cyclotroll resonance; Quantum transport in the accumulation layer at InSb/GaAs( 100); Optical deformation potentials for PbSe and PbTe; Deformation potentials of a semimetal: intersubband transitions in; Magnetic contribution to the specific heat of IV-VI semimagnetic; Peculiarities of conductivity of PbSnTe(In) in the persistent photoconductivity regime Oscillator parameters of PbTeGallium-induced resonant states in Pb1-x Snx Te:Ga under pressure; Electrical properties of n-layers of narrow pap semiconductors formed by low energy ion beam milling; Pump-probe measurement of lifetime engineering in far-infrared SiGe quantum wells; Intersubband transitions in Gap-AIP heterostructures for infrared applications; Transport characteristics of In1-xGaxN films by MOVPE; Influence of indium on the vibrational modes of dilute narrow band gap GaNAs alloys; Variable range hopping transport in narrow-gap semiconducting partially filled skutterudites.
• Publisher Details: Boca Raton, FL : CRC Press
• Publication Date: 2006
• Extent: 1 online resource
• Subjects: 621.38152; Condensed matter; Physics; Optoelectronics; Electromagnetism; Microwaves; Condensed matter; Electromagnetism; Microwaves; Optoelectronics; Physics; Electronic books
• Languages: English
• ISBNs: 9781482269215
• Related ISBNs: 148226921X
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.