Compound Semiconductors 2002. (2003)

• Record Type: Book
• Further Information: Note: Marc Ilegems, Gunter Weimann, Joachim Wagner.
• Authors: Ilegems, Marc; Weimann, Günter; Wagner, Joachim
• Contents: Cover; Half Title; Series Page; Title Page; Copyright Page; Contents; International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award; ISCS Quantum Devices Award; ISCS Young Scientist Award; Preface; Symposium Committees; Section 1: Growth; GaAs on silicon using an oxide buffer layer; Ultra shallow GaAs sidewall tunnel junctions implemented with low-temperature area selective regrowth; Growth and properties ofpolycrystalline GaN on ZnO/Si substrates by ECR-MBE; Single crystalline InN films grown on Si (111) substrates; Growth and evaluation of CdTe/Si (111) by hot wall epitaxy A surface reconstruction functioning as a micro mask during in-situ layer-by-layeretching of GaAs( 111 )B using AsBr 3Comparative study ofp-type dopants, Mg and Be in GaN grown by RF-MBE; Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence; Section 2: Processing and Characterization; Contribution of interface states and bulk traps to GaAs MIS admittance; Electrical isolation of p-type InP and InGaAs layers by iron implantation: Effects of substrate temperature Inductively coupled argon plasma enhanced quantum well intermixing in InGaAs/InGaAsP laser structureAnnealing studies of Si-implanted GaN by Hall-effect and photoluminescence measurements; Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates; An ""anomalous"" drift of defects under electric field in CdSe and CdS single crystals; Injection energy dependence of electron thermalization length in AlGaAs/GaAs quantum well structures; Optical and structural investigations of GeSi02 systems Thermal quenching of emission of self-assembled InAs quantum dots embedded into InGaAs/GaAs MQWGuided surface-acoustic-wave modes in AIN layers grown on SiC substrates; Photoluminescence from deep levels in Fe-doped InP substrates; Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructures; Two-dimensional mapping of resistivity in semi-insulating GaAs wafers with large diameter using a nondestructive technique; Sonic-stimulated temperature rise around dislocation; The cluster variation method for semiconductor alloys Exciton formation inhibition in GalnAsllnP Fe doped quantum wellsCompositional dependence of electron traps in Ga(As, N) grown by molecular-beam epitaxy; The influence of the quantum lifetime on the width of the quantum Hall plateaus; lntersubband transitions in strain compensated InGaAs/ AlAs quantum well structures grown on InP; Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPE; Section 3: Quantum-Wires and -Dots
• Publisher Details: Boca Raton, FL : CRC Press
• Publication Date: 2003
• Extent: 1 online resource
• Subjects: 621.38152; Condensed matter; Physics; Electronics; Optoelectronics; Condensed matter; Electronics; Optoelectronics; Physics; Electronic books
• Languages: English
• ISBNs: 9781482269109; 1482269104
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.