Applications of silicon-germanium heterostructure devices. (©2001)

• Record Type: Book
• Further Information: Note: C.K. Maiti and G.A. Armstrong.
• Other Names: Maiti, C. K; Armstrong, G. A
• Contents: Introduction; Film Growth and Material Parameters; Principles of SiGe-HBTs; Design of SiGe-HBTs; Simulation of SiGe-HBTs; Strained-Si Heterostructure FETs; SiGe Heterostructure Schottky Diodes; SiGe Optoelectronic Devices; RF Applications of SiGe-HBTs
• Publisher Details: Bristol : Institute of Physics Pub
• Publication Date: 2001
• Copyright Date: 2001
• Extent: 1 online resource (xv, 401 pages), illustrations
• Subjects: 621.38152; Heterostructures; Optoelectronic devices; Silicon crystals; Germanium crystals; Silicon Compounds; Electronics -- Materials; Optoelectronic Devices; TECHNOLOGY & ENGINEERING -- Electronics -- Solid State; TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors; Germanium crystals; Heterostructures; Optoelectronic devices; Silicon crystals; Electronic books
• Languages: English
• ISBNs: 0585488290; 9780585488295; 9781420034691; 1420034693; 9780750307239; 0750307234
• Related ISBNs: 0750307234
• Notes: Note: Includes bibliographical references and index.; Note: Print version record.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.