Silicon-germanium strained layers and heterostructures. (2003)

• Record Type: Book
• Other Names: Jain, S. C (Suresh C.), 1926-; Willander, M; Jain, S. C (Suresh C.), 1926-
• Contents: Front Cover; Silicon-Germanium Strained Layers and Heterostructures: Semiconductors and Semimetals; Copyright Page; Contents; Preface to the first edition; Preface to the second edition; Chapter 1. Introduction; Chapter 2. Strain, stability, reliability and growth; Chapter 3. Mechanism of strain relaxation; Chapter 4. Strain, growth, and TED in SiGeC layers; Chapter 5. Bandstructure and related properties; Chapter 6. Heterostructure Bipolar Transistors; Chapter 7. FETs and other devices; Bibliography; Index; Contents of Volumes.
• Edition: 2nd ed
• Publisher Details: Amsterdam London : Academic
• Publication Date: 2003
• Extent: 1 online resource (xiv, 308 pages), illustrations
• Subjects: 621.38152; Semiconductors; Heterostructures; Germanium; Silicon; Compound semiconductors; Germanium; Heterostructures; Layer structure (Solids); Silicon; TECHNOLOGY & ENGINEERING -- Electronics -- Solid State; TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors; Germanium; Heterostructures; Semiconductors; Silicon; Electronic books
• Languages: English
• ISBNs: 9780080541020
• Related ISBNs: 008054102X
• Notes: Note: Includes bibliographical references and index.; Note: Print version record.
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.