Germanium silicon : physics and materials /: physics and materials. (1998)

• Record Type: Book
• Further Information: Note: Volume editors, Robert Hull, John C. Bean.
• Other Names: Hull, Robert, 1959-; Bean, John C (John Condon), 1950-
• Contents: J.C. Bean, Growth Techniques and Procedures. R. Hull, Misfit Strain Accommodation in SiGe Heterostructures. M.J. Shaw and M. Jaros, Fundamental Physics of Strained Layer GeSi: Quo Vadis? F. Cerdeira, Optical Properties. S.A. Ringel and P.N. Grillot, Electronic Properties and Deep Levels in Germanium-Silicon. J.C. Campbell, Optical Applications. K. Eberl, K. Brunner, and O.G. Schmidt, Si1-yCy and Si1-x-yGexCy Alloy Layers. Subject Index.
• Publisher Details: Place of publication not identified : Academic Press
• Publication Date: 1998
• Extent: 1 online resource (444 pages)
• Subjects: 621.38152; Semiconductors; Silicon; Germanium; Germanium; Semiconductors; Silicon; Semiconducteurs; Semi-métaux; Silicium; Germanium
• Languages: English
• ISBNs: 9780080864549; 0080864546
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.