High speed heterostructure devices. (1994)

• Record Type: Book
• Further Information: Note: Volume editors, Richard A. Kiehl, T.C.L. Gerhard Sollner.
• Other Names: Kiehl, Richard A; Sollner, T. C. L. Gerhard
• Contents: F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.
• Publisher Details: Place of publication not identified : Academic Press
• Publication Date: 1994
• Extent: 1 online resource (454 pages)
• Subjects: 621.38152; Heterostructures; Electronic circuits; Electronic apparatus and appliances; Electronic systems; Electronic apparatus and appliances; Electronic circuits; Electronic systems; Heterostructures; Semiconducteurs; Non-métaux; Circuitos electrónicos; Electrónica -- Aparatos e instrumentos; Sistemas electrónicos
• Languages: English
• ISBNs: 9780080864389; 0080864384
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.