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Subject semiconductor laser -- heterostructure -- AlGaInAs/InP -- asymmetric waveguide.

1. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide. (February 2021)

Authors:
Volkov, N A; Andreev, A Yu; Yarotskaya, I V; Ryaboshtan, Yu L; Svetogorov, V N; Ladugin, M A; Padalitsa, A A; Marmalyuk, A A; Slipchenko, S O; Lyutetskii, A V; Veselov, D A; Pikhtin, N A
Journal:
Quantum electronics
Issue:
Volume 51:Number 2(2021)
Page Start:
133
Record Type:
Journal Article
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