1. Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure. (August 2017) Authors: Wei, Jiaxing; Liu, Siyang; Liu, Xiaoqiang; Sun, Weifeng; Liu, Yuwei; Liu, Xiaohong; Hou, Bo Journal: Solid-state electronics Issue: Volume 134(2017) Page Start: 58 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗