1. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM. (26th March 2021) Authors: Wu, Chung-Wei; Lin, Chun-Chu; Chen, Po-Hsun; Chang, Ting-Chang; Zhou, Kuan-Ju; Chen, Wen-Chung; Tan, Yung-Fang; Yeh, Yu-Hsuan; Chou, Sheng-Yao; Huang, Hui-Chun; Tsai, Tsung-Ming; Sze, Simon M. Journal: Applied physics express Issue: Volume 14:Number 4(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗