Realizing forming-free characteristic by doping Ag into HfO2-based RRAM. (26th March 2021)

• Record Type: Journal Article
• Authors: Wu, Chung-Wei; Lin, Chun-Chu; Chen, Po-Hsun; Chang, Ting-Chang; Zhou, Kuan-Ju; Chen, Wen-Chung; Tan, Yung-Fang; Yeh, Yu-Hsuan; Chou, Sheng-Yao; Huang, Hui-Chun; Tsai, Tsung-Ming; Sze, Simon M.
• Is Part Of: Applied physics express. Volume 14:Number 4(2021)
• Publication Date: 2021-03-26
• Subjects: forming-free -- Ag-doped -- HfO2 -- nonvolatile memory -- resistive random access memory (RRAM); Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abec58
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: In this work, Ag-doped HfO2 -based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO2 as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament.