1. High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing. Issue 16 (29th June 2021) Authors: Sakurai, Yuya; Ueno, Kohei; Kobayashi, Atsushi; Uesugi, Kenjiro; Miyake, Hideto; Fujioka, Hiroshi Journal: Physica status solidi Issue: Volume 218:Issue 16(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗